Field diffusion in disordered organic materials under conditions of occupied deep states
- Авторлар: Nikitenko V.1, Kudrov A.1
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Мекемелер:
- National Research Nuclear University “MEPhI”
- Шығарылым: Том 51, № 2 (2017)
- Беттер: 158-162
- Бөлім: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199409
- DOI: https://doi.org/10.1134/S1063782617020129
- ID: 199409
Дәйексөз келтіру
Аннотация
A simple analytical model of the field-diffusion coefficient is developed for moderate carrier concentrations. Hopping transport is described by the multiple-trapping model based on the transport-level concept. A continuity equation with a diffusion coefficient depending on carrier concentration is obtained, the time dependence of the field-diffusion coefficient under non-steady-state conditions is found. The time intervals in which deep state population affects the mobility and diffusion coefficient under conditions of time-of-flight experiments are estimated. It is shown that the field-diffusion coefficient increases in a long time interval while the mobility is unchanged, which is reminiscent of a similar case of nonequilibrium initial carrier generation at the low-concentration limit.
Авторлар туралы
V. Nikitenko
National Research Nuclear University “MEPhI”
Хат алмасуға жауапты Автор.
Email: vladronik@yandex.ru
Ресей, Kashirskoe sh. 31, Moscow, 115409
A. Kudrov
National Research Nuclear University “MEPhI”
Email: vladronik@yandex.ru
Ресей, Kashirskoe sh. 31, Moscow, 115409