Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD
- Авторлар: Rybalchenko D.1, Mintairov S.1, Salii R.1, Shvarts M.1, Timoshina N.1, Kalyuzhnyy N.1
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Мекемелер:
- Ioffe Physical–Technical Institute
- Шығарылым: Том 51, № 1 (2017)
- Беттер: 93-99
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199343
- DOI: https://doi.org/10.1134/S1063782617010201
- ID: 199343
Дәйексөз келтіру
Аннотация
Metamorphic Ga0.76In0.24As heterostructures for photovoltaic converters are grown by the MOCVD (metal–organic chemical vapor deposition) technique. It is found that, due to the valence-band offset at the p-In0.24Al0.76As/p-In0.24Ga0.76As (wide-gap window/emitter) heterointerface, a potential barrier for holes arises as a result of a low carrier concentration in the wide-gap material. The use of an InAlGaAs solid solution with an Al content lower than 40% makes it possible to raise the hole concentration in the widegap window up ~9 × 1018 cm–3 and completely remove the potential barrier, thereby reducing the series resistance of the device. The parameters of an GaInAs metamorphic buffer layer with a stepwise In content profile are calculated and its epitaxial growth conditions are optimized, which improves carrier collection from the n-GaInAs base region and provides a quantum efficiency of 83% at a wavelength of 1064 nm. Optimization of the metamorphic heterostructure of the photovoltaic converter results in that its conversion efficiency for laser light with a wavelength of 1064 nm is 38.5%.
Авторлар туралы
D. Rybalchenko
Ioffe Physical–Technical Institute
Email: nickk@mail.ioffe.ru
Ресей, St. Petersburg, 194021
S. Mintairov
Ioffe Physical–Technical Institute
Email: nickk@mail.ioffe.ru
Ресей, St. Petersburg, 194021
R. Salii
Ioffe Physical–Technical Institute
Email: nickk@mail.ioffe.ru
Ресей, St. Petersburg, 194021
M. Shvarts
Ioffe Physical–Technical Institute
Email: nickk@mail.ioffe.ru
Ресей, St. Petersburg, 194021
N. Timoshina
Ioffe Physical–Technical Institute
Email: nickk@mail.ioffe.ru
Ресей, St. Petersburg, 194021
N. Kalyuzhnyy
Ioffe Physical–Technical Institute
Хат алмасуға жауапты Автор.
Email: nickk@mail.ioffe.ru
Ресей, St. Petersburg, 194021