Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures
- Авторлар: Khvostikov V.1, Kalyuzhnyy N.1, Mintairov S.1, Sorokina S.1, Potapovich N.1, Emelyanov V.1, Timoshina N.1, Andreev V.1
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Мекемелер:
- Ioffe Physical–Technical Institute
- Шығарылым: Том 50, № 9 (2016)
- Беттер: 1220-1224
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197901
- DOI: https://doi.org/10.1134/S1063782616090128
- ID: 197901
Дәйексөз келтіру
Аннотация
Photovoltaic laser-power converters for a wavelength of λ = 809 nm are developed and fabricated on the basis of single-junction AlGaAs/GaAs structures grown by metal-organic vapor-phase epitaxy. The parameters of the photovoltaic structure constituted by an optical “window” and a cladding layer are optimized by mathematical simulation. Photovoltaic converters with areas of S = 10.2 and 12.2 mm2 and 4 cm2 are fabricated and studied. For photocells with S = 10.2 mm2, the monochromatic efficiency (η) was 60% at a current density of 5.9 A/cm2. A photovoltaic module with a working voltage of 4 V (η = 56.3% at 0.34 A/cm2) is assembled.
Авторлар туралы
V. Khvostikov
Ioffe Physical–Technical Institute
Хат алмасуға жауапты Автор.
Email: vlkhv@scell.ioffe.ru
Ресей, St. Petersburg, 194021
N. Kalyuzhnyy
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Ресей, St. Petersburg, 194021
S. Mintairov
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Ресей, St. Petersburg, 194021
S. Sorokina
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Ресей, St. Petersburg, 194021
N. Potapovich
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Ресей, St. Petersburg, 194021
V. Emelyanov
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Ресей, St. Petersburg, 194021
N. Timoshina
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Ресей, St. Petersburg, 194021
V. Andreev
Ioffe Physical–Technical Institute
Email: vlkhv@scell.ioffe.ru
Ресей, St. Petersburg, 194021