Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects
- Авторлар: Aleksandrov I.1, Mansurov V.1, Zhuravlev K.1,2
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Мекемелер:
- Rzhanov Institute of Semiconductor Physics
- Novosibirsk State University
- Шығарылым: Том 50, № 8 (2016)
- Беттер: 1038-1042
- Бөлім: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/197606
- DOI: https://doi.org/10.1134/S1063782616080042
- ID: 197606
Дәйексөз келтіру
Аннотация
The carrier recombination dynamics in an ensemble of GaN/AlN quantum dots is studied. The model proposed for describing this dynamics takes into account the transition of carriers between quantum dots and defects in a matrix. Comparison of the experimental and calculated photoluminescence decay curves shows that the interaction between quantum dots and defects slows down photoluminescence decay in the ensemble of GaN/AlN quantum dots.
Авторлар туралы
I. Aleksandrov
Rzhanov Institute of Semiconductor Physics
Хат алмасуға жауапты Автор.
Email: Aleksandrov@isp.nsc.ru
Ресей, Novosibirsk, 630090
V. Mansurov
Rzhanov Institute of Semiconductor Physics
Email: Aleksandrov@isp.nsc.ru
Ресей, Novosibirsk, 630090
K. Zhuravlev
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: Aleksandrov@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090