Effect of the anode-emitter injection efficiency on the characteristics of hybrid SIT–MOS transistors
- Авторлар: Kyuregyan A.1, Gorbatyuk A.2, Ivanov B.3
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Мекемелер:
- Lenin All-Russia Electrical Engineering Institute
- Ioffe Physical–Technical Institute
- Ul’yanov (Lenin) Saint Petersburg Electrotechnical University “LETI”
- Шығарылым: Том 50, № 7 (2016)
- Беттер: 957-962
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197488
- DOI: https://doi.org/10.1134/S1063782616070137
- ID: 197488
Дәйексөз келтіру
Аннотация
The possibility of optimizing high-voltage hybrid SIT–MOP transistors (HSMTs) by means of a local reduction in lifetime near the anode emitter and/ or by decreasing its injection efficiency by three different methods is studied using two-dimensional numerical simulation. It is shown that all four optimization methods are equivalent from the physical point of view and make it possible to decrease the turn-off energy loss Eoff by 30–40%, as in insulated gate bipolar transistors (IGBTs). However, all other conditions being equal, the energy Eoff in the HSMT appeared 15–35% lower than in equivalent trench IGBTs.
Авторлар туралы
A. Kyuregyan
Lenin All-Russia Electrical Engineering Institute
Хат алмасуға жауапты Автор.
Email: semlab@yandex.ru
Ресей, ul. Krasnokazarmennaya 12, Moscow, 111250
A. Gorbatyuk
Ioffe Physical–Technical Institute
Email: semlab@yandex.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021
B. Ivanov
Ul’yanov (Lenin) Saint Petersburg Electrotechnical University “LETI”
Email: semlab@yandex.ru
Ресей, ul. Prof. Popova 5, St. Petersburg, 197376