Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6H-SiC (000\(\bar 1\)) in vacuum
- Авторлар: Kotousova I.1, Lebedev S.1,2, Lebedev A.1,2
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Мекемелер:
- Ioffe Physical–Technical Institute
- National Research University of Information Technologies, Mechanics and Optics
- Шығарылым: Том 50, № 7 (2016)
- Беттер: 951-956
- Бөлім: Carbon Systems
- URL: https://journals.rcsi.science/1063-7826/article/view/197482
- DOI: https://doi.org/10.1134/S1063782616070083
- ID: 197482
Дәйексөз келтіру
Аннотация
The structure of graphene layers grown by sublimation on a 6H-SiC (000\(\bar 1\)) substrate surface is studied by electron diffraction depending on the sublimation temperature and substrate-surface pretreatment method. It is shown that the use of polishing sublimation etching of the substrate before thermal destruction at a temperature of 1350°C on the substrate surface results in the formation of single-crystal graphene domains with graphene-lattice rotation by 30° with respect to the SiC lattice and a small fraction of amorphous domains. An increase in the temperature to 1500°C leads to the partial formation of a polycrystalline graphene phase with turbostratic structure while retaining the preferred orientation of graphene crystallites as at 1350°C. The use of pregrowth annealing before thermal destruction makes it possible to grow a graphene film with a more ordered and homogeneous structure without inclusions of amorphous and polycrystalline components. The preferred orientation of graphene domains in the film remains unchanged.
Авторлар туралы
I. Kotousova
Ioffe Physical–Technical Institute
Email: shura.lebe@mail.ioffe.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021
S. Lebedev
Ioffe Physical–Technical Institute; National Research University of Information Technologies, Mechanics and Optics
Email: shura.lebe@mail.ioffe.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021; pr. Kronverkskii 49, St. Petersburg, 197101
A. Lebedev
Ioffe Physical–Technical Institute; National Research University of Information Technologies, Mechanics and Optics
Хат алмасуға жауапты Автор.
Email: shura.lebe@mail.ioffe.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021; pr. Kronverkskii 49, St. Petersburg, 197101