Piezoresistive and posistor effects in polymer-semiconductor and polymer-ferropiezoceramic composites
- Авторлар: Mamedov H.1, Parali L.2, Kurbanov M.3, Bayramov A.3, Tatardar F.3, Sabikoglu I.4
-
Мекемелер:
- Azerbaijan Technical University
- Department of Electronics and Automation
- Institute of Physics
- Faculty of Arts & Sciences, Departments of Physics
- Шығарылым: Том 50, № 5 (2016)
- Беттер: 621-626
- Бөлім: Amorphous, Vitreous, and Organic Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197092
- DOI: https://doi.org/10.1134/S1063782616050171
- ID: 197092
Дәйексөз келтіру
Аннотация
In this study, piezoresistive and posistor effects in polymer-semiconductor and polymer-ferropiezoceramic composites have been investigated. The results show that composites based on crystallizable polymers, such as PVDF, HDPE, and PP dispersed by semiconductors and ferropiezoelectric fillers have piezoresistive and posistor properties, respectively. At low pressure, charge carriers tunneling through the located thin polymer among filler particles into the barrier define the conductivity of the composite. When pressure value is increased from 0 to 1 MPa, the thickness of the interlayer decreases and tunnel conductivity descends exponentially depending on barrier height. The piezoresistor sensitivity of a composite based on PVDF-70 vol % + Si-30 vol % is higher than a composite based on HDPE-70 vol % + Ge-30 vol %. Furthermore, the posistor properties of polymer composites dispersed by ferropiezoceramic are determined as the maximum resistance that varies significantly with temperature. Posistor effect in composites based on polymer + ferropiezoceramic is associated with the height of the barrier layer, which changes according to properties of filler, polymer, and dielectric permittivity of two-phase composites. The highest specific resistance related to HDPE-70 vol % + BaTiO3-30 vol % composite was observed at ~403 K.
Негізгі сөздер
Авторлар туралы
H. Mamedov
Azerbaijan Technical University
Email: levent.parali@cbu.edu.tr
Әзірбайжан, Baku
L. Parali
Department of Electronics and Automation
Хат алмасуға жауапты Автор.
Email: levent.parali@cbu.edu.tr
Түркия, Turgutlu, Manisa, 45400
M. Kurbanov
Institute of Physics
Email: levent.parali@cbu.edu.tr
Әзірбайжан, Baku
A. Bayramov
Institute of Physics
Email: levent.parali@cbu.edu.tr
Әзірбайжан, Baku
F. Tatardar
Institute of Physics
Email: levent.parali@cbu.edu.tr
Әзірбайжан, Baku
I. Sabikoglu
Faculty of Arts & Sciences, Departments of Physics
Email: levent.parali@cbu.edu.tr
Түркия, Manisa, 45140