Author Details
Arapov, Yu. G.
Issue | Section | Title | File |
Vol 50, No 12 (2016) | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures | |
Vol 51, No 2 (2017) | Fabrication, Treatment, and Testing of Materials and Structures | The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination | |
Vol 52, No 12 (2018) | Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 | Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures | |
Vol 52, No 15 (2018) | Erratum | Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures |