Author Details
Gavrilov, S. A.
Issue | Section | Title | File |
Vol 50, No 1 (2016) | Physics of Semiconductor Devices | Photodetectors based on CuInS2 | |
Vol 50, No 13 (2016) | Microelectronic and Nanoelectronic Technology | Effect of ionic Ag+ transfer on localization of metal-assisted etching of silicon surface | |
Vol 51, No 2 (2017) | Surfaces, Interfaces, and Thin Films | Influence of the doping type and level on the morphology of porous Si formed by galvanic etching | |
Vol 51, No 8 (2017) | Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors | Effect of electrolyte temperature on the cathodic deposition of Ge nanowires on in and Sn particles in aqueous solutions | |
Vol 53, No 15 (2019) | Technological Processes and Routes | Mathematical Model of the Evaporation of Amalgam Components in Discharge Radiation Sources |