Email this article Magnetoimpedance Effect in a SOI-Based Structure
- Authors: Smolyakov D.A.1, Tarasov A.S.1, Yakovlev I.A.1,2, Volochaev M.N.1,2
-
Affiliations:
- Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences
- Siberian State University of Science and Technology
- Issue: Vol 53, No 14 (2019)
- Pages: 1964-1966
- Section: Nanostructure Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/207541
- DOI: https://doi.org/10.1134/S1063782619140215
- ID: 207541
Cite item
Open Access
Access granted
Subscription Access
Abstract
This paper presents the results of the study the transport properties of the SOI-based structure. Measurements were carried out on an alternating current with an external magnetic field in a wide temperature range. The influence of the magnetic field was found. We associate this effect with the influence on the surface states located at the interface, this appears as a change of the energy of their levels. This effect is enhanced by the nanoscale of the silicon channel.
About the authors
D. A. Smolyakov
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences
Author for correspondence.
Email: sda88@iph.krasn.ru
Russian Federation, Krasnoyarsk, 660036
A. S. Tarasov
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences
Author for correspondence.
Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk, 660036
I. A. Yakovlev
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences; Siberian State University of Science and Technology
Author for correspondence.
Email: yia@iph.krasn.ru
Russian Federation, Krasnoyarsk, 660036; Krasnoyarsk, 660014
M. N. Volochaev
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences; Siberian State University of Science and Technology
Author for correspondence.
Email: volochaev91@mail.ru
Russian Federation, Krasnoyarsk, 660036; Krasnoyarsk, 660014
Supplementary files
