Electron Mobility Calculation of Diluted III–V-Nitrides Alloys

Abstract

A 10-band k.p model has been adopted to study the electronic transport properties of dilute III–V-nitride alloys. The N incorporation into III–V material causes a significant band gap reduction. The shapes of electrons effective mass is investigated as a function of N concentration. The mobility of electron \({{\mu }_{e}}\) in GaN_xAs_1 – x, InN_xP_1 –x, InN_xAs_{1 –x} and InN_xSb_{1 –x} shows a significant decrease for nitrogen composition less than 1%. In the range 1–5% observed in InN_xP_{1 –x,} InN_xAs_{1 –x} and InN_xSb_{1 –x}, however, there is a slow increase. In contrast the modification of electrons mobility affects profoundly the electron conductivity. The variation of electron conductivity as function of N composition is shown as well.