Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs
- Authors: Lebedev A.A.1, Levinshtein M.E.1, Ivanov P.A.1, Kozlovski V.V.2, Strel’chuk A.M.1, Shabunina E.I.1, Fursin L.3
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Affiliations:
- Ioffe Institute
- Peter the Great St. Petersburg Polytechnic University
- United Silicon Carbide, Inc.
- Issue: Vol 53, No 12 (2019)
- Pages: 1568-1572
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/207344
- DOI: https://doi.org/10.1134/S1063782619160140
- ID: 207344
Cite item
Abstract
Low frequency noise is studied in 4H-SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) irradiated with 15-MeV protons. Irradiation is carried out at room temperature in the frequency range from 1 Hz to 50 kHz upon irradiation with doses Φ of 1012 to 6 × 1013 cm–2. The frequency dependence of the spectral noise density SI follows the law SI ∝ 1/f with good accuracy. A correlation between the saturation current of the output characteristic Id(Vd) and the low-frequency noise level is traced. At doses in the range 1012 cm–2 ≤ Φ ≤ 6 × 1013 cm–2, the saturation current varies within about 20%, whereas the noise level changes by two orders of magnitude. The results of noise spectroscopy are used to estimate the trap density in the gate oxide, Ntv. In unirradiated structures, Ntv ≈ 5.4 × 1018 cm–3 eV–1. At Φ = 6 × 1013 cm–2, Ntv increases to ~7.2 × 1019 cm–3 eV–1.
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About the authors
A. A. Lebedev
Ioffe Institute
Author for correspondence.
Email: melev@nimis.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. E. Levinshtein
Ioffe Institute
Email: melev@nimis.ioffe.ru
Russian Federation, St. Petersburg, 194021
P. A. Ivanov
Ioffe Institute
Email: melev@nimis.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. V. Kozlovski
Peter the Great St. Petersburg Polytechnic University
Email: melev@nimis.ioffe.ru
Russian Federation, St. Petersburg, 195251
A. M. Strel’chuk
Ioffe Institute
Email: melev@nimis.ioffe.ru
Russian Federation, St. Petersburg, 194021
E. I. Shabunina
Ioffe Institute
Email: melev@nimis.ioffe.ru
Russian Federation, St. Petersburg, 194021
L. Fursin
United Silicon Carbide, Inc.
Email: melev@nimis.ioffe.ru
United States, Suite E Monmouth Junction, NJ 08852