Study of the Auger Recombination Energy Threshold in a Series of Waveguide Heterostructures with HgTe/Cd0.7Hg0.3Te QWs Near 14 μm
- Authors: Utochkin V.V.1, Aleshkin V.Y.1, Dubinov A.A.1, Gavrilenko V.I.1, Kulikov N.S.1, Fadeev M.A.1, Rumyantsev V.V.1, Mikhailov N.N.2, Dvoretskii S.A.2, Morozov S.V.1
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Affiliations:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Issue: Vol 53, No 9 (2019)
- Pages: 1154-1157
- Section: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/206700
- DOI: https://doi.org/10.1134/S1063782619090264
- ID: 206700
Cite item
Abstract
Stimulated emission from a heterostructure with Hg0.903Cd0.097Te/Cd0.7Hg0.3Te quantum wells, placed in a waveguide layer of wide-gap CdHgTe, is obtained at wavelengths of 14–11 μm and a temperatures of 18–80 K. The threshold Auger recombination energy is calculated for a set of heterostructures with quantum wells of pure HgTe with a band gap of 90 meV (wavelength 14 μm). The possibility of fabricating lasers operating at 14 μm and working temperatures higher than that of liquid nitrogen is demonstrated.
Keywords
About the authors
V. V. Utochkin
Institute for Physics of Microstructures, Russian Academy of Sciences
Author for correspondence.
Email: xenonum@bk.ru
Russian Federation, Nizhny Novgorod, 603950 GSP-105
V. Ya. Aleshkin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: xenonum@bk.ru
Russian Federation, Nizhny Novgorod, 603950 GSP-105
A. A. Dubinov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: xenonum@bk.ru
Russian Federation, Nizhny Novgorod, 603950 GSP-105
V. I. Gavrilenko
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: xenonum@bk.ru
Russian Federation, Nizhny Novgorod, 603950 GSP-105
N. S. Kulikov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: xenonum@bk.ru
Russian Federation, Nizhny Novgorod, 603950 GSP-105
M. A. Fadeev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: xenonum@bk.ru
Russian Federation, Nizhny Novgorod, 603950 GSP-105
V. V. Rumyantsev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: xenonum@bk.ru
Russian Federation, Nizhny Novgorod, 603950 GSP-105
N. N. Mikhailov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: xenonum@bk.ru
Russian Federation, Novosibirsk, 630090
S. A. Dvoretskii
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: xenonum@bk.ru
Russian Federation, Novosibirsk, 630090
S. V. Morozov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: xenonum@bk.ru
Russian Federation, Nizhny Novgorod, 603950 GSP-105