Diffusion and Interaction of In and As Implanted into SiO2 Films
- Authors: Tyschenko I.E.1, Voelskow M.2, Mikhaylov A.N.3, Tetelbaum D.I.3
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Institute of Ion-Beam Physics and Material Research, Helmholtz-Center Dresden–Rossendorf
- National Research Lobachevsky State University of Nizhny Novgorod
- Issue: Vol 53, No 8 (2019)
- Pages: 1004-1010
- Section: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/206574
- DOI: https://doi.org/10.1134/S1063782619080190
- ID: 206574
Cite item
Abstract
By means of Rutherford backscattering spectrometry, electron microscopy, and energy-dispersive X-ray spectroscopy, the distribution and interaction of In and As atoms implanted into thermally grown SiO2 films to concentrations of about 1.5 at % are studied in relation to the temperature of subsequent annealing in nitrogen vapors in the range of T = 800–1100°C. It is found that annealing at T = 800–900°C results in the segregation of As atoms at a depth corresponding to the As+-ion range and in the formation of As nanoclusters that serve as sinks for In atoms. An increase in the annealing temperature to 1100°C yields the segregation of In atoms at the surface of SiO2 with the simultaneous enhanced diffusion of As atoms. The corresponding diffusion coefficient is DAs = 3.2 × 10–14 cm2 s–1.
Keywords
About the authors
I. E. Tyschenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Author for correspondence.
Email: tys@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
M. Voelskow
Institute of Ion-Beam Physics and Material Research, Helmholtz-Center Dresden–Rossendorf
Email: tys@isp.nsc.ru
Germany, Dresden, D-01314
A. N. Mikhaylov
National Research Lobachevsky State University of Nizhny Novgorod
Email: tys@isp.nsc.ru
Russian Federation, Nizhny Novgorod, 603950
D. I. Tetelbaum
National Research Lobachevsky State University of Nizhny Novgorod
Email: tys@isp.nsc.ru
Russian Federation, Nizhny Novgorod, 603950