Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers
- Authors: Kukushkin S.A.1,2,3, Mizerov A.M.4, Grashchenko A.S.1, Osipov A.V.1,2, Nikitina E.V.4, Timoshnev S.N.4, Bouravlev A.D.4, Sobolev M.S.4
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Affiliations:
- Institute of Problems of Mechanical Engineering, Russian Academy of Sciences
- ITMO University
- Peter the Great St. Petersburg Polytechnic University
- St. Petersburg Academic University
- Issue: Vol 53, No 2 (2019)
- Pages: 180-187
- Section: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/205682
- DOI: https://doi.org/10.1134/S1063782619020143
- ID: 205682
Cite item
Abstract
The photoelectric properties of GaN/SiC/Si(111) and GaN/Si(111) heterostructures grown by plasma-assisted molecular-beam epitaxy under the same growth conditions on identical silicon substrates, but with different buffer layers, are experimentally investigated. The GaN/SiC/Si(111) structure is formed on a Si substrate with the SiC buffer layer grown by a new atom-substitution technique and the GaN/Si(111) structure, on a Si substrate subjected to pre-epitaxial plasma nitridation. The significant effect of carbon-vacancy clusters contained in the SiC layer on the growth of the GaN layer and its optical and photoelectric properties is found. It is experimentally established that the GaN/SiC/Si(111) heterostructure has a higher photosensitivity than the GaN/Si(111) heterostructure. In the GaN/SiC/Si(111) heterostructure, the coexistence of two oppositely directed p–n junctions is observed. One p–n junction forms at the SiC/Si interface and the other, at the GaN/SiC interface. It is shown that the occurrence of an electric barrier in the GaN/Si(111) heterostructure at the GaN/Si(111) heterointerface is caused by the formation of a thin silicon-nitride transition layer during pre-epitaxial plasma nitridation of the Si(111) substrate.
About the authors
S. A. Kukushkin
Institute of Problems of Mechanical Engineering, Russian Academy of Sciences; ITMO University; Peter the Great St. Petersburg Polytechnic University
Author for correspondence.
Email: sergey.a.kukushkin@gmail.com
Russian Federation, St. Petersburg, 199178; St. Petersburg, 197101; St. Petersburg, 195251
A. M. Mizerov
St. Petersburg Academic University
Email: sergey.a.kukushkin@gmail.com
Russian Federation, St. Petersburg, 194021
A. S. Grashchenko
Institute of Problems of Mechanical Engineering, Russian Academy of Sciences
Email: sergey.a.kukushkin@gmail.com
Russian Federation, St. Petersburg, 199178
A. V. Osipov
Institute of Problems of Mechanical Engineering, Russian Academy of Sciences; ITMO University
Email: sergey.a.kukushkin@gmail.com
Russian Federation, St. Petersburg, 199178; St. Petersburg, 197101
E. V. Nikitina
St. Petersburg Academic University
Email: sergey.a.kukushkin@gmail.com
Russian Federation, St. Petersburg, 194021
S. N. Timoshnev
St. Petersburg Academic University
Email: sergey.a.kukushkin@gmail.com
Russian Federation, St. Petersburg, 194021
A. D. Bouravlev
St. Petersburg Academic University
Email: sergey.a.kukushkin@gmail.com
Russian Federation, St. Petersburg, 194021
M. S. Sobolev
St. Petersburg Academic University
Email: sergey.a.kukushkin@gmail.com
Russian Federation, St. Petersburg, 194021