Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications
- Authors: Shubina K.Y.1, Berezovskaya T.N.1, Mokhov D.V.1, Morozov I.A.1, Kotlyar K.P.1, Mizerov A.M.1, Nikitina E.V.1, Bouravleuv A.D.1
-
Affiliations:
- Saint Petersburg National Research Academic University RAS
- Issue: Vol 52, No 16 (2018)
- Pages: 2117-2119
- Section: 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY
- URL: https://journals.rcsi.science/1063-7826/article/view/205437
- DOI: https://doi.org/10.1134/S1063782618160297
- ID: 205437
Cite item
Abstract
Two different approaches for the etching of the gallium nitride epitaxial layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy have been elaborated. It is demonstrated that anisotropic etch profiles can be achieved by both photoenhanced wet chemical etching and reactive plasma-chemical etching methods. Moreover, it is shown, that the photoenhanced wet chemical etching allows to remove GaN layer without damaging silicon substrate.
About the authors
K. Yu. Shubina
Saint Petersburg National Research Academic University RAS
Author for correspondence.
Email: rein.raus.2010@gmail.com
Russian Federation, St. Petersburg, 194021
T. N. Berezovskaya
Saint Petersburg National Research Academic University RAS
Email: rein.raus.2010@gmail.com
Russian Federation, St. Petersburg, 194021
D. V. Mokhov
Saint Petersburg National Research Academic University RAS
Email: rein.raus.2010@gmail.com
Russian Federation, St. Petersburg, 194021
I. A. Morozov
Saint Petersburg National Research Academic University RAS
Email: rein.raus.2010@gmail.com
Russian Federation, St. Petersburg, 194021
K. P. Kotlyar
Saint Petersburg National Research Academic University RAS
Email: rein.raus.2010@gmail.com
Russian Federation, St. Petersburg, 194021
A. M. Mizerov
Saint Petersburg National Research Academic University RAS
Email: rein.raus.2010@gmail.com
Russian Federation, St. Petersburg, 194021
E. V. Nikitina
Saint Petersburg National Research Academic University RAS
Email: rein.raus.2010@gmail.com
Russian Federation, St. Petersburg, 194021
A. D. Bouravleuv
Saint Petersburg National Research Academic University RAS
Email: rein.raus.2010@gmail.com
Russian Federation, St. Petersburg, 194021