Effect of the Conductive Channel Cut-Off on Operation of n+–n–n+ GaN NW-Based Gunn Diode
- Authors: Mozharov A.M.1, Vasiliev A.A.1, Komissarenko F.E.2, Bolshakov A.D.1, Sapunov G.A.1, Fedorov V.V.1, Cirlin G.E.1,2,3, Mukhin I.S.1,2
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Affiliations:
- St. Petersburg Academic University, Russian Academy of Sciences
- ITMO University
- Institute for Analytical Instrumentation, Russian Academy of Sciences
- Issue: Vol 52, No 14 (2018)
- Pages: 1809-1812
- Section: Infrared Microwave Phenomena in Nanostructures
- URL: https://journals.rcsi.science/1063-7826/article/view/205004
- DOI: https://doi.org/10.1134/S106378261814021X
- ID: 205004
Cite item
Abstract
Nowadays modern science and technology require development of efficient electromagnetic emitters covering far GHz and THz ranges. Semiconductor elements with negative differential resistance (NDR) such as Gunn diodes based on GaAs and InP are well-established powerful microwave emitters. In this work the Gunn diode structure based on single GaN nanowire with the potential of THz device development was proposed and investigated both theoretically and experimentally. According to the results of the numerical modeling, the Gunn generation can be obtained in the proposed geometry. Dependence of the doping concentration on the NW length necessary for the electrons domain formation was obtained. The nanostructures were grown via molecular beam epitaxy technique. Contacts to single nanowires were fabricated with the combination of e-beam lithography and thermal evaporation. It was shown experimentally that the volt-ampere characteristics of the GaN nanowire structure possess current saturation region. Experimental results correspond well to proposed numerical model.
About the authors
A. M. Mozharov
St. Petersburg Academic University, Russian Academy of Sciences
Author for correspondence.
Email: mozharov@spbau.ru
Russian Federation, St. Petersburg, 194021
A. A. Vasiliev
St. Petersburg Academic University, Russian Academy of Sciences
Email: mozharov@spbau.ru
Russian Federation, St. Petersburg, 194021
F. E. Komissarenko
ITMO University
Email: mozharov@spbau.ru
Russian Federation, St. Petersburg, 197101
A. D. Bolshakov
St. Petersburg Academic University, Russian Academy of Sciences
Email: mozharov@spbau.ru
Russian Federation, St. Petersburg, 194021
G. A. Sapunov
St. Petersburg Academic University, Russian Academy of Sciences
Email: mozharov@spbau.ru
Russian Federation, St. Petersburg, 194021
V. V. Fedorov
St. Petersburg Academic University, Russian Academy of Sciences
Email: mozharov@spbau.ru
Russian Federation, St. Petersburg, 194021
G. E. Cirlin
St. Petersburg Academic University, Russian Academy of Sciences; ITMO University; Institute for Analytical Instrumentation, Russian Academy of Sciences
Email: mozharov@spbau.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 190103
I. S. Mukhin
St. Petersburg Academic University, Russian Academy of Sciences; ITMO University
Email: mozharov@spbau.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101