Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters
- Authors: Mintairov S.A.1,2, Kalyuzhnyy N.A.2, Nadtochiy A.M.1,3,2, Maximov M.V.1,2, Nevedomskiy V.N.2, Sokura L.A.2,4, Rouvimov S.S.5, Shvarts M.Z.2, Zhukov A.E.1
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Affiliations:
- St. Petersburg Academic University
- Ioffe Institute
- Solar Dots Ltd.
- St. Petersburg Electronic University LETI
- University of Notre Dame
- Issue: Vol 52, No 10 (2018)
- Pages: 1249-1254
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/204122
- DOI: https://doi.org/10.1134/S1063782618100147
- ID: 204122
Cite item
Abstract
GaAs photovoltaic converters containing quantum well-dot (QWD) heterostructures are studied. The QWD properties are intermediate between those of quantum wells (QWs) and quantum dots. The QWDs are obtained by the epitaxial deposition of In0.4Ga0.6As with a nominal thickness of 8 single layers by metal-organic vapor phase epitaxy. QWDs are a dense array of elastically strained islands that localize carriers in three directions and are formed by a local increase in the indium concentration and/ or InGaAs-layer thickness. There are two quantum-well levels of varied nature in structures with QWDs. These levels are manifested in the spectral characteristics of GaAs photovoltaic converters. A short-wavelength peak with a maximum at around 935 nm is associated with absorption in the residual QW, and the long-wavelength peak (1015–1030 nm) is due to absorption in the QWDs. Investigation by transmission electron microscopy demonstrates that an increase in the number of InGaAs layers leads to stronger elastic stresses, which, in turn, increases the carrier confinement energy in the QWDs and lead to a corresponding long-wavelength shift of the internal quantum efficiency spectrum.
About the authors
S. A. Mintairov
St. Petersburg Academic University; Ioffe Institute
Author for correspondence.
Email: mintairov@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
N. A. Kalyuzhnyy
Ioffe Institute
Email: mintairov@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. M. Nadtochiy
St. Petersburg Academic University; Solar Dots Ltd.; Ioffe Institute
Email: mintairov@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021; St. Petersburg, 194021
M. V. Maximov
St. Petersburg Academic University; Ioffe Institute
Email: mintairov@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
V. N. Nevedomskiy
Ioffe Institute
Email: mintairov@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021
L. A. Sokura
Ioffe Institute; St. Petersburg Electronic University LETI
Email: mintairov@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197376
S. S. Rouvimov
University of Notre Dame
Email: mintairov@scell.ioffe.ru
United States, Notre Dame, Indiana, 46556
M. Z. Shvarts
Ioffe Institute
Email: mintairov@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. E. Zhukov
St. Petersburg Academic University
Email: mintairov@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021