Radiative Recombination, Carrier Capture at Traps, and Photocurrent Relaxation in PbSnTe:In with a Composition Close to Band Inversion
- Authors: Ishchenko D.V.1, Neizvestny I.G.1
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Issue: Vol 52, No 7 (2018)
- Pages: 836-839
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/203596
- DOI: https://doi.org/10.1134/S1063782618070096
- ID: 203596
Cite item
Abstract
Based on the notions that PbSnTe:In is a direct-gap semiconductor, the radiative-recombination lifetime is calculated, and the photocurrent relaxation and dependences of the instantaneous electron and hole lifetime are calculated under the assumption that PbSnTe:In is a disordered structure containing capture centers. These calculations explain such experimentally observed peculiarities of PbSnTe:In as a high photosensitivity in a wide wavelength range, pinning of the Fermi level, and long-term photocurrent relaxation. Calculations are also compared with experimental data and the possible parameters of photodetectors are evaluated.
About the authors
D. V. Ishchenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Author for correspondence.
Email: ischenkod@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
I. G. Neizvestny
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: ischenkod@isp.nsc.ru
Russian Federation, Novosibirsk, 630090