Optical Properties of AlGaAs/GaAs Resonant Bragg Structure at the Second Quantum State
- Authors: Chaldyshev V.V.1,2,3, Kundelev E.V.1,3, Poddubny A.N.1, Vasil’ev A.P.1, Yagovkina M.A.1, Chend Y.4, Maharjan N.4, Liu Z.4, Nakarmi M.L.4, Shakya N.M.5
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Affiliations:
- Ioffe Institute
- Peter the Great St.Petersburg Polytechnic University (SPbPU)
- ITMO University
- Brooklyn College and the Graduate Center of the City University of New York
- New York University-Tandon School of Engineering
- Issue: Vol 52, No 4 (2018)
- Pages: 447-451
- Section: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties
- URL: https://journals.rcsi.science/1063-7826/article/view/202746
- DOI: https://doi.org/10.1134/S1063782618040097
- ID: 202746
Cite item
Abstract
Photoluminescence, optical reflectance and electro-reflectance spectroscopies were employed to study an AlGaAs/GaAs multiple-quantum-well based resonant Bragg structure, which was designed to match optical Bragg resonance with the exciton-polariton resonance at the second quantum state in the GaAs quantum wells. The structure with 60 periods of AlGaAs/GaAs quantum wells was grown on a semi-insulating substrate by molecular beam epitaxy. Broad and enhanced optical and electro-reflectance features were observed when the Bragg resonance was tuned to the second quantum state of the GaAs quantum well excitons manifesting an enhancement of the light-matter interaction under double-resonance conditions. By applying an alternating electric field, we revealed electro-reflectance features related to the x(e2-hh2) and x(e2-hh1) excitons. The excitonic transition x(e2-hh1), which is prohibited at zero electric field, was allowed by a DC bias due to brake of symmetry and increased overlap of the electron and hole wave functions caused by electric field.
About the authors
V. V. Chaldyshev
Ioffe Institute; Peter the Great St.Petersburg Polytechnic University (SPbPU); ITMO University
Author for correspondence.
Email: chald.gvg@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 195251; St. Petersburg, 197101
E. V. Kundelev
Ioffe Institute; ITMO University
Email: chald.gvg@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101
A. N. Poddubny
Ioffe Institute
Email: chald.gvg@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. P. Vasil’ev
Ioffe Institute
Email: chald.gvg@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. A. Yagovkina
Ioffe Institute
Email: chald.gvg@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Y. Chend
Brooklyn College and the Graduate Center of the City University of New York
Email: chald.gvg@mail.ioffe.ru
United States, Brooklyn, NY, 11210
N. Maharjan
Brooklyn College and the Graduate Center of the City University of New York
Email: chald.gvg@mail.ioffe.ru
United States, Brooklyn, NY, 11210
Z. Liu
Brooklyn College and the Graduate Center of the City University of New York
Email: chald.gvg@mail.ioffe.ru
United States, Brooklyn, NY, 11210
M. L. Nakarmi
Brooklyn College and the Graduate Center of the City University of New York
Email: chald.gvg@mail.ioffe.ru
United States, Brooklyn, NY, 11210
N. M. Shakya
New York University-Tandon School of Engineering
Email: chald.gvg@mail.ioffe.ru
United States, Brooklyn, NY, 11201