X-Ray Study of the Superstructure in Heavily Doped Porous Indium Phosphide
- Authors: Boiko M.E.1, Sharkov M.D.1, Karlina L.B.1, Boiko A.M.1, Konnikov S.G.1
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Affiliations:
- Ioffe Institute
- Issue: Vol 52, No 1 (2018)
- Pages: 84-87
- Section: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/202271
- DOI: https://doi.org/10.1134/S1063782618010074
- ID: 202271
Cite item
Abstract
An indium-phosphide InP sample subjected to the pore-generation procedure and then doped with S atoms is studied by the methods of X-ray diffraction analysis (XRD) and small-angle X-ray scattering (SAXS) (with CuKα1-radiation). The XRD data demonstrate that the sample consists of (coherent) aligned homogeneous components. A point detector is used to obtain, in the anomalous transmission mode by Borrmann, a set of SAXS curves at sample positions varied by azimuthal rotations. The SAXS data are used to simulate a 2D SAXS pattern for the sample under study, which makes it possible to determine the long-distance translation symmetry and, consequently, the presence of a superstructure. The interplanar distances in the superstructure in the directions (110) and (1 0) of the InP lattice are found to be ~260 and 450 nm, respectively. The symmetry group of the superstructure is determined as C2v in the (001) plane of the sample lattice.
About the authors
M. E. Boiko
Ioffe Institute
Author for correspondence.
Email: boikomix@gmail.com
Russian Federation, St. Petersburg, 194021
M. D. Sharkov
Ioffe Institute
Email: boikomix@gmail.com
Russian Federation, St. Petersburg, 194021
L. B. Karlina
Ioffe Institute
Email: boikomix@gmail.com
Russian Federation, St. Petersburg, 194021
A. M. Boiko
Ioffe Institute
Email: boikomix@gmail.com
Russian Federation, St. Petersburg, 194021
S. G. Konnikov
Ioffe Institute
Email: boikomix@gmail.com
Russian Federation, St. Petersburg, 194021