Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers
- Authors: Lebedev A.A.1, Ber B.Y.1, Oganesyan G.A.1, Belov S.V.1, Lebedev S.P.1,2, Nikitina I.P.1, Seredova N.V.1, Shakhov L.V.1, Kozlovski V.V.3
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Affiliations:
- Ioffe Institute
- ITMO University
- Peter the Great St. Petersburg Polytechnic University
- Issue: Vol 51, No 8 (2017)
- Pages: 1044-1046
- Section: Spectroscopy, Interaction with Radiation
- URL: https://journals.rcsi.science/1063-7826/article/view/200985
- DOI: https://doi.org/10.1134/S1063782617080218
- ID: 200985
Cite item
Abstract
The effects of 8-MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates are studied. Changes in the sample parameters were recorded by the Hall-effect method and judged from photoluminescence spectra. The Hall method was employed to distinguish between the effects of irradiation on the charge-carrier concentration and mobility. It is found that the charge-carrier removal rate (Vd) is ~110 cm–1. Full compensation of the samples with an initial charge-carrier concentration of ~6.5 × 1017 cm–3 is observed at irradiation doses of ~6 × 1015 cm–2. It is found that the mobility at these doses decreased by only a factor of 2.5. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of so-called defect-related photoluminescence is observed.
About the authors
A. A. Lebedev
Ioffe Institute
Author for correspondence.
Email: Shura.Lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
B. Ya. Ber
Ioffe Institute
Email: Shura.Lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
G. A. Oganesyan
Ioffe Institute
Email: Shura.Lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. V. Belov
Ioffe Institute
Email: Shura.Lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. P. Lebedev
Ioffe Institute; ITMO University
Email: Shura.Lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101
I. P. Nikitina
Ioffe Institute
Email: Shura.Lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. V. Seredova
Ioffe Institute
Email: Shura.Lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
L. V. Shakhov
Ioffe Institute
Email: Shura.Lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. V. Kozlovski
Peter the Great St. Petersburg Polytechnic University
Email: Shura.Lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251