Charge-carrier density collapse in layered crystals of the family [(Ge,Sn,Pb)(Te,Se)]m[(Bi,Sb)2(Te,Se)3]n (m, n = 0, 1, 2…)
- Authors: Korzhuev M.A.1
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Affiliations:
- Baikov Institute of Metallurgy and Materials Sciences
- Issue: Vol 51, No 7 (2017)
- Pages: 924-927
- Section: XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/200512
- DOI: https://doi.org/10.1134/S1063782617070181
- ID: 200512
Cite item
Abstract
The causes of the “charge-carrier density collapse”, i.e., a sharp increase in the equilibrium charge-carrier density n, p = 1 × 1019 → (2–5) × 1020 cm–3 in going from binary alloys such as GeTe and Bi2Te3 to the family of ternary alloys [(Ge,Sn,Pb)(Te,Se)]m[(Bi,Sb)2(Te,Se)3]n [m, n = 0, 1, 2…) are discussed. The phenomenon is associated with the positional disordering of heterovalent cations (Ge+2, Sn+2, Pb+2 ↔ Bi+3, Sb+3) in the cation sublattice of ternary alloys. The phenomenon is not observed during the disordering of isovalent cations (Bi+3 ↔ Sb+3) or anions (Te–2 ↔ Se–2).
About the authors
M. A. Korzhuev
Baikov Institute of Metallurgy and Materials Sciences
Author for correspondence.
Email: korzhuev@imet.ac.ru
Russian Federation, Moscow, 119334