Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates
- Authors: Galiev G.B.1, Klochkov A.N.1, Vasil’evskii I.S.2, Klimov E.A.1, Pushkarev S.S.1, Vinichenko A.N.2, Khabibullin R.A.1, Maltsev P.P.1
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Affiliations:
- Institute of Ultrahigh-Frequency Semiconductor Electronics
- National Research Nuclear University MEPhI
- Issue: Vol 51, No 6 (2017)
- Pages: 760-765
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/200065
- DOI: https://doi.org/10.1134/S1063782617060100
- ID: 200065
Cite item
Abstract
The electron-transport and optical properties of heterostructures with a surface InGaAs/InAlAs quantum well in the cases of inverted δ doping with Si atoms (below the quantum well) and of standard δ doping (above the quantum well) are compared. It is shown that, in the case of inverted doping, the two-dimensional electron density in the quantum well is increased in comparison with the case of the standard arrangement of the doping layer at identical compositions and thicknesses of other heterostructure layers. The experimentally observed features of low-temperature electron transport (Shubnikov–de Haas oscillations, Hall effect) and the photoluminescence spectra of heterostructures are interpreted by simulating the band structure.
About the authors
G. B. Galiev
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: klochkov_alexey@mail.ru
Russian Federation, Moscow, 117105
A. N. Klochkov
Institute of Ultrahigh-Frequency Semiconductor Electronics
Author for correspondence.
Email: klochkov_alexey@mail.ru
Russian Federation, Moscow, 117105
I. S. Vasil’evskii
National Research Nuclear University MEPhI
Email: klochkov_alexey@mail.ru
Russian Federation, Moscow, 115409
E. A. Klimov
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: klochkov_alexey@mail.ru
Russian Federation, Moscow, 117105
S. S. Pushkarev
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: klochkov_alexey@mail.ru
Russian Federation, Moscow, 117105
A. N. Vinichenko
National Research Nuclear University MEPhI
Email: klochkov_alexey@mail.ru
Russian Federation, Moscow, 115409
R. A. Khabibullin
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: klochkov_alexey@mail.ru
Russian Federation, Moscow, 117105
P. P. Maltsev
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: klochkov_alexey@mail.ru
Russian Federation, Moscow, 117105