Properties of ZnO:Er3+ films obtained by the sol–gel method
- Authors: Malyutina-Bronskaya V.V.1, Semchenko A.V.2, Sidsky V.V.2, Fedorov V.E.3
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Affiliations:
- State Scientific and Production Amalgamation “Optics, Optoelectronics, and Laser Technology,”
- Francisk Skorina Gomel State University
- Nikolaev Institute of Inorganic Chemistry, Siberian Branch
- Issue: Vol 51, No 3 (2017)
- Pages: 392-395
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/199656
- DOI: https://doi.org/10.1134/S1063782617030186
- ID: 199656
Cite item
Abstract
Polycrystalline and single-phase ZnO:Al:Er3+ films are synthesized by the sol–gel method (based on different types of solvents) on surfaces of single-crystal silicon and glass. The electrical measurement data (current–voltage and capacitance–voltage characteristics) show that these ZnO:Al:Er3+ films are photosensitive. The introduction of Er3+ rare-earth ions into a zinc-oxide film manifests itself in photosensitivity of the current–voltage and capacitance–voltage characteristics to light in the visible and infrared (IR) spectral ranges. The results of this study indicate that ZnO:Al:Er3+ films synthesized by the sol–gel method can be used to design optoelectronic devices, in particular, to form solar-cell active layers.
About the authors
V. V. Malyutina-Bronskaya
State Scientific and Production Amalgamation “Optics, Optoelectronics, and Laser Technology,”
Author for correspondence.
Email: v_malyutina@rambler.ru
Belarus, Minsk, 220072
A. V. Semchenko
Francisk Skorina Gomel State University
Email: v_malyutina@rambler.ru
Belarus, Gomel, 246019
V. V. Sidsky
Francisk Skorina Gomel State University
Email: v_malyutina@rambler.ru
Belarus, Gomel, 246019
V. E. Fedorov
Nikolaev Institute of Inorganic Chemistry, Siberian Branch
Email: v_malyutina@rambler.ru
Russian Federation, Novosibirsk, 630090