Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals
- Authors: Usanov D.A.1, Nikitov S.A.2, Skripal A.V.1, Ponomarev D.V.1, Latysheva E.V.1
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Affiliations:
- Chernyshevsky National Research State University
- Kotelnikov Institute of Radio Engineering and Electronics
- Issue: Vol 50, No 13 (2016)
- Pages: 1759-1763
- Section: Methods and Technique of Measurements
- URL: https://journals.rcsi.science/1063-7826/article/view/199255
- DOI: https://doi.org/10.1134/S1063782616130091
- ID: 199255
Cite item
Abstract
A method is proposed for the measurement of the electrophysical characteristics of semiconductor structures: the electrical conductivity of the n layer, which plays the role of substrate for a semiconductor structure, and the thickness and electrical conductivity of the strongly doped epitaxial n+ layer. The method is based on the use of a one-dimensional microwave photonic crystal with a violation of periodicity containing the semiconductor structure under investigation. The characteristics of epitaxial gallium-arsenide structures consisting of an epitaxial layer and the semi-insulating substrate measured by this method are presented.
About the authors
D. A. Usanov
Chernyshevsky National Research State University
Author for correspondence.
Email: UsanovDA@info.sgu.ru
Russian Federation, Saratov, 410071
S. A. Nikitov
Kotelnikov Institute of Radio Engineering and Electronics
Email: UsanovDA@info.sgu.ru
Russian Federation, Moscow, 103907
A. V. Skripal
Chernyshevsky National Research State University
Email: UsanovDA@info.sgu.ru
Russian Federation, Saratov, 410071
D. V. Ponomarev
Chernyshevsky National Research State University
Email: UsanovDA@info.sgu.ru
Russian Federation, Saratov, 410071
E. V. Latysheva
Chernyshevsky National Research State University
Email: UsanovDA@info.sgu.ru
Russian Federation, Saratov, 410071