First-principles calculations of the electronic and structural properties of GaSb
- Authors: Castaño-González E.1, Seña N.2, Mendoza-Estrada V.1, González-Hernández R.1, Dussan A.2, Mesa F.3
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Affiliations:
- Grupo de Investigación en Física Aplicada, Departamento de Física
- Departamento de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones
- Grupo NanoTech, Facultad de Ciencias Naturales y Matemáticas
- Issue: Vol 50, No 10 (2016)
- Pages: 1280-1286
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197979
- DOI: https://doi.org/10.1134/S1063782616100110
- ID: 197979
Cite item
Abstract
In this paper, we carried out first-principles calculations in order to investigate the structural and electronic properties of the binary compound gallium antimonide (GaSb). This theoretical study was carried out using the Density Functional Theory within the plane-wave pseudopotential method. The effects of exchange and correlation (XC) were treated using the functional Local Density Approximation (LDA), generalized gradient approximation (GGA): Perdew–Burke–Ernzerhof (PBE), Perdew-Burke-Ernzerhof revised for solids (PBEsol), Perdew-Wang91 (PW91), revised Perdew–Burke–Ernzerhof (rPBE), Armiento–Mattson 2005 (AM05) and meta-generalized gradient approximation (meta-GGA): Tao–Perdew–Staroverov–Scuseria (TPSS) and revised Tao–Perdew–Staroverov–Scuseria (RTPSS) and modified Becke-Johnson (MBJ). We calculated the densities of state (DOS) and band structure with different XC potentials identified and compared them with the theoretical and experimental results reported in the literature. It was discovered that functional: LDA, PBEsol, AM05 and RTPSS provide the best results to calculate the lattice parameters (a) and bulk modulus (B0); while for the cohesive energy (Ecoh), functional: AM05, RTPSS and PW91 are closer to the values obtained experimentally. The MBJ, Rtpss and AM05 values found for the band gap energy is slightly underestimated with those values reported experimentally.
About the authors
E.-E. Castaño-González
Grupo de Investigación en Física Aplicada, Departamento de Física
Email: rhernandezj@uninorte.edu.co
Colombia, Barranquilla
N. Seña
Departamento de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones
Email: rhernandezj@uninorte.edu.co
Colombia, Bogotá
V. Mendoza-Estrada
Grupo de Investigación en Física Aplicada, Departamento de Física
Email: rhernandezj@uninorte.edu.co
Colombia, Barranquilla
R. González-Hernández
Grupo de Investigación en Física Aplicada, Departamento de Física
Author for correspondence.
Email: rhernandezj@uninorte.edu.co
Colombia, Barranquilla
A. Dussan
Departamento de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones
Email: rhernandezj@uninorte.edu.co
Colombia, Bogotá
F. Mesa
Grupo NanoTech, Facultad de Ciencias Naturales y Matemáticas
Email: rhernandezj@uninorte.edu.co
Colombia, Bogotá