Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector
- Authors: Chatbouri S.1, Troudi M.1, Sghaier N.1,2, Kalboussi A.1, Aimez V.3, Drouin D.1, Souifi A.4
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Affiliations:
- Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir
- Equipe composants électroniques (UR/99/13-22)
- Laboratoire Nanotechnologies et Nanosystémes (UMI-LN2 3463), Université de Sherbrooke—CNRS—INSA de Lyon-ECL-UJF-CPE Lyon, Institut Interdisciplinaire d’Innovation Technologique
- Institut des Nanotechnologies de Lyon—site INSA de Lyon, UMR CNRS 5270
- Issue: Vol 50, No 9 (2016)
- Pages: 1163-1167
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/197821
- DOI: https://doi.org/10.1134/S1063782616090062
- ID: 197821
Cite item
Abstract
In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiOx = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.
About the authors
S. Chatbouri
Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir
Author for correspondence.
Email: Samir.chatbouri@yahoo.com
Tunisia, Monastir, 5019
M. Troudi
Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir
Email: Samir.chatbouri@yahoo.com
Tunisia, Monastir, 5019
N. Sghaier
Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir; Equipe composants électroniques (UR/99/13-22)
Email: Samir.chatbouri@yahoo.com
Tunisia, Monastir, 5019; Merazka, Nabeul, 8000
A. Kalboussi
Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir
Email: Samir.chatbouri@yahoo.com
Tunisia, Monastir, 5019
V. Aimez
Laboratoire Nanotechnologies et Nanosystémes (UMI-LN2 3463), Université de Sherbrooke—CNRS—INSA de Lyon-ECL-UJF-CPE Lyon, Institut Interdisciplinaire d’Innovation Technologique
Email: Samir.chatbouri@yahoo.com
Canada, 3000 Boulevard de I’Universite, SherbrookeQuébec, J1K OA5
D. Drouin
Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir
Email: Samir.chatbouri@yahoo.com
Tunisia, Monastir, 5019
A. Souifi
Institut des Nanotechnologies de Lyon—site INSA de Lyon, UMR CNRS 5270
Email: Samir.chatbouri@yahoo.com
France, Bât. Blaise Pascal, 7 avenue Jean Capelle, Villeurbanne cedex, 69621