Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO2–Si structures
- Authors: Kalygina V.M.1, Egorova I.M.1, Novikov V.A.1, Prudaev I.A.1, Tolbanov O.P.1
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Affiliations:
- National Research Tomsk State University
- Issue: Vol 50, No 9 (2016)
- Pages: 1156-1162
- Section: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/197815
- DOI: https://doi.org/10.1134/S1063782616090104
- ID: 197815
Cite item
Abstract
The effect of annealing in argon and oxygen plasma on the I–V characteristics and photoresponse of TiO2–Si structures is investigated. The titanium oxide films are prepared by rf magnetron sputtering onto n-Si substrates. The observed features in the behavior of the electrical and photoelectric characteristics of the samples after annealing and treatment in oxygen plasma are attributed to a variation in the phase composition of the oxide film due to the appearance of anatase or rutile crystallites, depending on the treatment conditions.
About the authors
V. M. Kalygina
National Research Tomsk State University
Author for correspondence.
Email: Kalygina@ngs.ru
Russian Federation, Tomsk, 634050
I. M. Egorova
National Research Tomsk State University
Email: Kalygina@ngs.ru
Russian Federation, Tomsk, 634050
V. A. Novikov
National Research Tomsk State University
Email: Kalygina@ngs.ru
Russian Federation, Tomsk, 634050
I. A. Prudaev
National Research Tomsk State University
Email: Kalygina@ngs.ru
Russian Federation, Tomsk, 634050
O. P. Tolbanov
National Research Tomsk State University
Email: Kalygina@ngs.ru
Russian Federation, Tomsk, 634050