Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing
- Authors: Krivyakin G.K.1, Volodin V.A.1,2, Kochubei S.A.1, Kamaev G.N.1, Purkrt A.3, Remes Z.3, Fajgar R.4, Stuchliková T.H.3, Stuchlik J.3
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Institute of Physics ASCR
- Institute of Chemical Process Fundamentals of the ASCR
- Issue: Vol 50, No 7 (2016)
- Pages: 935-940
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/197460
- DOI: https://doi.org/10.1134/S1063782616070101
- ID: 197460
Cite item
Abstract
Silicon nanocrystals are formed in the i layers of p–i–n structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 (below the melting threshold) to 250 mJ/cm2 (above the threshold). The nanocrystal sizes are estimated by analyzing Raman spectra using the phonon confinement model. The average is from 2.5 to 3.5 nm, depending on the laser-annealing parameters. Current–voltage measurements show that the fabricated p–i–n structures possess diode characteristics. An electroluminescence signal in the infrared (IR) range is detected for the p–i–n structures with Si nanocrystals; the peak position (0.9–1 eV) varies with the laser-annealing parameters. Radiative transitions are presumably related to the nanocrystal–amorphous-matrix interface states. The proposed approach can be used to produce light-emitting diodes on non-refractory substrates.
About the authors
G. K. Krivyakin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: volodin@isp.nsc.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090
V. A. Volodin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Author for correspondence.
Email: volodin@isp.nsc.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
S. A. Kochubei
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: volodin@isp.nsc.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090
G. N. Kamaev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: volodin@isp.nsc.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090
A. Purkrt
Institute of Physics ASCR
Email: volodin@isp.nsc.ru
Czech Republic, Cukrovarnická 10, Praha 6, 162 00
Z. Remes
Institute of Physics ASCR
Email: volodin@isp.nsc.ru
Czech Republic, Cukrovarnická 10, Praha 6, 162 00
R. Fajgar
Institute of Chemical Process Fundamentals of the ASCR
Email: volodin@isp.nsc.ru
Czech Republic, Rozvojová 135, Praha 6, 165 02
T. H. Stuchliková
Institute of Physics ASCR
Email: volodin@isp.nsc.ru
Czech Republic, Cukrovarnická 10, Praha 6, 162 00
J. Stuchlik
Institute of Physics ASCR
Email: volodin@isp.nsc.ru
Czech Republic, Cukrovarnická 10, Praha 6, 162 00