Induced surface states of the ultrathin Ba/3C-SiC(111) interface
- Authors: Benemanskaya G.V.1,2, Dementev P.A.1,2, Kukushkin S.A.2,3, Lapushkin M.N.1,2, Senkovskiy B.V.4, Timoshnev S.N.2,5
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Affiliations:
- Ioffe Physical–Technical Institute
- Institute of Problems of Mechanical Engineering
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- Helmholtz-Zentrum Berlin fur Materialen und Energie
- Academic University
- Issue: Vol 50, No 4 (2016)
- Pages: 457-461
- Section: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/196973
- DOI: https://doi.org/10.1134/S1063782616040072
- ID: 196973
Cite item
Abstract
The electronic properties of the Ba/3C-SiC(111) nanointerface are for the first time studied by photoelectron spectroscopy with the use of synchrotron radiation in the energy range 80–450 eV. The experiments are performed in situ in ultrahigh vacuum for ultrathin Ba coatings on 3C-SiC(111) samples grown by a new method of substituting substrate atoms. It is found that the adsorption of Ba brings about the appearance of induced surface states with the binding energies 1.9, 6.2, and 7.5 eV. Evolution of the surface states and the spectra of the Si 2p and C 1s core levels shows that the Ba/3C-SiC(111) interface is formed due to charge transfer from Ba adatoms to surface Si atoms and underlying C atoms.
About the authors
G. V. Benemanskaya
Ioffe Physical–Technical Institute; Institute of Problems of Mechanical Engineering
Author for correspondence.
Email: Galina.Benemanskaya@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 199178
P. A. Dementev
Ioffe Physical–Technical Institute; Institute of Problems of Mechanical Engineering
Email: Galina.Benemanskaya@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 199178
S. A. Kukushkin
Institute of Problems of Mechanical Engineering; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Email: Galina.Benemanskaya@mail.ioffe.ru
Russian Federation, St. Petersburg, 199178; St. Petersburg, 197101
M. N. Lapushkin
Ioffe Physical–Technical Institute; Institute of Problems of Mechanical Engineering
Email: Galina.Benemanskaya@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 199178
B. V. Senkovskiy
Helmholtz-Zentrum Berlin fur Materialen und Energie
Email: Galina.Benemanskaya@mail.ioffe.ru
Germany, Berlin, 12489
S. N. Timoshnev
Institute of Problems of Mechanical Engineering; Academic University
Email: Galina.Benemanskaya@mail.ioffe.ru
Russian Federation, St. Petersburg, 199178; St. Petersburg, 194021