Email this article Microdisk Injection Lasers for the 1.27-μm Spectral Range
- Authors: Kryzhanovskaya N.V.1, Maximov M.V.1,2, Blokhin S.A.2, Bobrov M.A.2,3, Kulagina M.M.2, Troshkov S.I.2, Zadiranov Y.M.2, Lipovskii A.A.1,3, Moiseev E.I.1, Kudashova Y.V.1, Livshits D.A.4, Ustinov V.M.2, Zhukov A.E.1,3,5
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Affiliations:
- St. Petersburg National Research Academic University, Russian Academy of Sciences
- Ioffe Physical–Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- Innolume GmbH
- St. Petersburg Scientific Center
- Issue: Vol 50, No 3 (2016)
- Pages: 390-393
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/196917
- DOI: https://doi.org/10.1134/S1063782616030131
- ID: 196917
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Abstract
Microdisk injection lasers on GaAs substrates, with a minimum diameter of 15 μm and an active region based on InAs/InGaAs quantum dots, are fabricated. The lasers operate in the continuous-wave mode at room temperature without external cooling. The lasing wavelength is around 1.27 μm at a minimum threshold current of 1.6 mA. The specific thermal resistance is estimated to be 5 × 10–3 °C cm2/W.
About the authors
N. V. Kryzhanovskaya
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 195220
M. V. Maximov
St. Petersburg National Research Academic University, Russian Academy of Sciences; Ioffe Physical–Technical Institute
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 195220; St. Petersburg, 194021
S. A. Blokhin
Ioffe Physical–Technical Institute
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 194021
M. A. Bobrov
Ioffe Physical–Technical Institute; Peter the Great St. Petersburg Polytechnic University
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg, 195251
M. M. Kulagina
Ioffe Physical–Technical Institute
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 194021
S. I. Troshkov
Ioffe Physical–Technical Institute
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 194021
Yu. M. Zadiranov
Ioffe Physical–Technical Institute
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 194021
A. A. Lipovskii
St. Petersburg National Research Academic University, Russian Academy of Sciences; Peter the Great St. Petersburg Polytechnic University
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 195220; St. Petersburg, 195251
E. I. Moiseev
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 195220
Yu. V. Kudashova
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 195220
D. A. Livshits
Innolume GmbH
Email: zhukale@gmail.com
Germany, Dortmund
V. M. Ustinov
Ioffe Physical–Technical Institute
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 194021
A. E. Zhukov
St. Petersburg National Research Academic University, Russian Academy of Sciences; Peter the Great St. Petersburg Polytechnic University; St. Petersburg Scientific Center
Author for correspondence.
Email: zhukale@gmail.com
Russian Federation, St. Petersburg, 195220; St. Petersburg, 195251; St. Petersburg, 199034
