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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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D

Danilovskii, E. Yu.
Daniltsev, V. M.
Danilyuk, A. L.
Danylchuk, S. P.
Das, S.
Dashevsky, Z. M.
Dashkov, A. S.
Daugnoraitė, E.
Daunov, M. I.
Davidovskaya, K. S.
Davidyuk, N. Yu.
Davletkildeev, N. A.
Davydov, A. B.
Davydov, S. Yu.
Davydov, V. Yu.
Davydova, D. V.
Davydovskaya, K. S.
de Boor, J.
de Boor, Johannes
de la Haye, C.
de Sa Pereira, D.
Dedkova, A. A.
Deev, A. V.
Deev, P. M.
Degoda, V. Ya.

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