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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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R

Rekhviashvili, S. Sh.
Remennyi, M. A.
Remennyy, M. A.
Remes, Z.
Remesnik, V. G.
Remizova, I. L.
Remizova, O. I.
Rempel, A. A.
Renaud, D.
Reshanov, S. A.
Reshetnikova, A. A.
Reunov, D. G.
Revin, M. V.
Reviznikov, D. L.
Rezaee, Sahar
Reznik, R. R.
Reznitsky, A. N.
Riemann, H.
Ril, A. I.
Rinke, M.
Rinke, Monika
Rinnert, H.
Risovaniy, V. D.
Robert-Goumet, C.
Rochas, S. S.

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