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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Author Details

Remes, Z.

Issue Section Title File
Vol 50, No 7 (2016) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing
Vol 51, No 10 (2017) Fabrication, Treatment, and Testing of Materials and Structures Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region
 

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