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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Author Details

Polubavkina, Yu. S.

Issue Section Title File
Vol 50, No 10 (2016) Physics of Semiconductor Devices Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency
Vol 51, No 2 (2017) Physics of Semiconductor Devices Specific features of waveguide recombination in laser structures with asymmetric barrier layers
Vol 51, No 2 (2017) Fabrication, Treatment, and Testing of Materials and Structures Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates
Vol 52, No 2 (2018) Physics of Semiconductor Devices Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers
 

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