Author Details
Romaka, V. A.
| Issue | Section | Title | File |
| Vol 50, No 7 (2016) | Electronic Properties of Semiconductors | Features of conductivity mechanisms in heavily doped compensated V1–xTixFeSb Semiconductor | |
| Vol 51, No 2 (2017) | Electronic Properties of Semiconductors | Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y | |
| Vol 52, No 3 (2018) | Electronic Properties of Semiconductors | Mechanism of the Generation of Donor–Acceptor Pairs in Heavily Doped n-ZrNiSn with the Ga Acceptor Impurity |