Author Details
Daniltsev, V. M.
| Issue | Section | Title | File |
| Vol 50, No 11 (2016) | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source | |
| Vol 53, No 10 (2019) | Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 | Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction |