作者的详细信息
Matveev, S. A.
| 期 | 栏目 | 标题 | 文件 |
| 卷 50, 编号 9 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Conditions of growth of high-quality relaxed Si1–xGex layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire |