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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
Home > Search > Author Details

Author Details

Dorofeev, S. G.

Issue Section Title File
Vol 51, No 5 (2017) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Characteristics of the Schottky barriers of two-terminal thin-film Al/nano-Si film/ITO structures
Vol 51, No 13 (2017) Materials for Electronic Engineering Production of Silicon Nanoparticles for Use in Solar Cells
Vol 53, No 4 (2019) Fabrication, Treatment, and Testing of Materials and Structures Electrical and Optical Characteristics of Si-Nanoparticle Films Deposited onto Substrates by High-Voltage Electrospraying from Ethanol Sols
Vol 53, No 16 (2019) Quantum Wells and Quantum Dots Differential Absorption Features of CdSe QDs in the Case of Resonant and Nonresonant Excitons Excitation
 

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