Semiconductors
ISSN 1063-7826 (Print)
ISSN 1090-6479 (Online)
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Author Details
Author Details
Odnobludov, M. A.
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Vol 53, No 6 (2019)
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
Thick α-Ga
2
O
3
Layers on Sapphire Substrates Grown by Halide Epitaxy
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