作者的详细信息
Nestoklon, M. O.
| 期 | 栏目 | 标题 | 文件 |
| 卷 51, 编号 10 (2017) | Review | Tight-binding simulation of silicon and germanium nanocrystals | |
| 卷 52, 编号 10 (2018) | Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors | Simulation of Electron and Hole States in Si Nanocrystals in a SiO2 Matrix: Choice of Parameters of the Empirical Tight-Binding Method | |
| 卷 53, 编号 14 (2019) | Nanostructures Characterization | Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC |