Author Details
Krasil’nikova, L. V.
| Issue | Section | Title | File |
| Vol 51, No 12 (2017) | XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 | Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen | |
| Vol 53, No 10 (2019) | Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 | Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers |