Author Details
Parshin, E. O.
| Issue | Section | Title | File |
| Vol 53, No 2 (2019) | Electronic Properties of Semiconductors | Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions | |
| Vol 53, No 2 (2019) | Spectroscopy, Interaction with Radiation | Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions |