Author Details
Malysheva, E. I.
| Issue | Section | Title | File |
| Vol 50, No 1 (2016) | XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 | Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer | |
| Vol 52, No 8 (2018) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions |