Informaçao sobre o Autor
Malysheva, E. I.
| Edição | Seção | Título | Arquivo |
| Volume 50, Nº 1 (2016) | XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 | Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer | |
| Volume 52, Nº 8 (2018) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions |