Author Details
Evropeytsev, E. A.
| Issue | Section | Title | File |
| Vol 52, No 1 (2018) | Physics of Semiconductor Devices | Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells | |
| Vol 52, No 5 (2018) | XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology | Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands | |
| Vol 53, No 16 (2019) | Nanostructures Technology | The Cavity-Effect in Site-Controlled GaN Nanocolumns with InGaN Insertions |