| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 52, № 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates |
|
| Том 53, № 3 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons |
|
| Том 53, № 8 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD |
|
