| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity |
|
| 卷 52, 编号 7 (2018) |
Electronic Properties of Semiconductors |
Radiative Recombination, Carrier Capture at Traps, and Photocurrent Relaxation in PbSnTe:In with a Composition Close to Band Inversion |
|
| 卷 53, 编号 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion |
|
