Author Details
Saharov, A. V.
Issue | Section | Title | File |
Vol 50, No 12 (2016) | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors | |
Vol 52, No 7 (2018) | Physics of Semiconductor Devices | Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System |